瑞薩電子推出的下一代磁阻隨機(jī)存取存儲(chǔ)器 (MRAM) 利用一種稱(chēng)為垂直磁隧道結(jié) STT（自旋轉(zhuǎn)移矩）的專(zhuān)有技術(shù)，其非易失性存儲(chǔ)性能優(yōu)于其他同類(lèi)產(chǎn)品，具有數(shù)據(jù)保持時(shí)間長(zhǎng)、串行和并行接口速度快等特點(diǎn)。 瑞薩電子的 MRAM具有多種存儲(chǔ)密度，能在較高的溫度下工作，適合許多應(yīng)用場(chǎng)景，例如需要快速備份檢索數(shù)據(jù)的工廠自動(dòng)化設(shè)備、需要長(zhǎng)期存儲(chǔ)數(shù)據(jù)的醫(yī)療數(shù)據(jù)單元等。
| Product ID |
Density |
I/O Voltage (V) |
Access Time(ns) |
Pkg. Type |
Temp. Range |
Carrier Type |
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4Mb |
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| M10082040108X0PSAY |
8Mb |
1.8V |
/ |
SOIC |
-40 to 105°C |
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| M10082040108X0PSAR |
8Mb |
1.8V |
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-40 to 105°C |
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| M10082040108X0IWAY |
8Mb |
1.8V |
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-40 to 85°C |
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| M10082040108X0IWAR |
8Mb |
1.8V |
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-40 to 85°C |
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| M10082040108X0PWAY |
8Mb |
1.8V |
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DFN |
-40 to 105°C |
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| M10082040108X0PWAR |
8Mb |
1.8V |
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-40 to 105°C |
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| M10082040054X0PSAY |
8Mb |
1.8V |
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| M10082040054X0PWAR |
8Mb |
1.8V |
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-40 to 105°C |
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8Mb |
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| M10162040108X0PSAY |
16Mb |
1.8V |
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-40 to 105°C |
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16Mb |
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| M10162040054X0ISAY |
16Mb |
1.8V |
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-40 to 85°C |
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| M10162040054X0ISAR |
16Mb |
1.8V |
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SOIC |
-40 to 85°C |
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| M10162040054X0PSAY |
16Mb |
1.8V |
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16Mb |
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16Mb |
1.8V |
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-40 to 85°C |
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暫無(wú) |
| M10162040054X0IWAR |
16Mb |
1.8V |
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DFN |
-40 to 85°C |
Reel |
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| M10162040054X0PWAY |
16Mb |
1.8V |
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-40 to 105°C |
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16Mb |
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16Mb |
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8Mb |
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-40 to 105°C |
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8Mb |
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-40 to 85°C |
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| M3008316045NX0PTBY |
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-40 to 105°C |
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32Mb |
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32Mb |
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45ns |
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32Mb |
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32Mb |
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-40 to 105°C |
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| M3032316045NX0PBCR |
32Mb |
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-40 to 105°C |
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